SI8900EDB-T2-E1

TrenchFET® SI8900EDB-T2-E1 belongs to voltage controlled semiconductor devices, which have advantages such as high input resistance, low noise, low power consumption, no secondary breakdown phenomenon, wide safe working area, and little influence from temperature and radiation. It is particularly suitable for circuits with high sensitivity and low noise.

Features

MOSFET SI8900EDB-T2-E1 has a continuous drain current capability of 5.4A, and its drain to source voltage withstand capacity is as high as 20V, ensuring stability and reliability in high voltage environments.

The 2 N-Channel (Dual) Common Drain design further enhances its current driving capability and performance. Meanwhile, the optimization of gate charge and input capacitance results in excellent performance in both switching speed and circuit performance. The wide operating temperature range (-55°C ~ 150°C (TJ)) of this MOSFET means that the field-effect transistor can operate stably in various extreme environments. The packaging form of 10-Micro Foot™ CSP (2x5) has the advantage of fast heat dissipation, greatly improving its performance and service life.

In terms of power consumption, the maximum power consumption of Vishay Siliconix SI8900EDB-T2-E1 is 1W, ensuring stability during long-term operation. Rds On (Max) @ Id, Vgs is -, which reduces heat loss and improves circuit efficiency. The packaging form of the 10-UFBGA, CSPBGA provides good electrical performance and mechanical stability for the circuit. In terms of electrical parameters, the maximum value of gate charge is Vgs -, which helps to reduce charge loss during the switching process and improve the efficiency of field-effect transistors. In addition, its Input Capacity (Ciss) (Max) @ Vds is -, which helps to reduce signal delay and improve the overall performance of the circuit.

The maximum value of Vgs (th) is 1V @ 1.1mA, which means that conduction can be achieved at lower gate voltages, further reducing power consumption and improving circuit performance. In summary, this crystal field-effect transistor has become a key component in electronic circuits due to its high performance, high reliability, easy integration, and adaptability to various application scenarios.

In terms of installation and packaging, SI8900EDB-T2-E1 field-effect control manufacturer Vishay Siliconix adopts Surface Mount design, simplifying the integration process and improving production efficiency. Meanwhile, using Tape & Reel (TR) packaging method facilitates storage, transportation, and automated production.

Applications

● Amplifiers and switches field

● Power management field

● Computer and communication fields

● Oscillators, switching power supplies, and power amplifiers